BLF546 NXP Semiconductors, BLF546 Datasheet - Page 6

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in a common source, class-B, push-pull circuit.
Ruggedness in class-B operation
The BLF546 is capable of withstanding a full load mismatch corresponding to VSWR = 10 through all phases under the
following conditions: V
2003 Sep 22
handbook, halfpage
CW, class-B
h
UHF push-pull power MOS transistor
= 25 C; R
V
Fig.8
GS
MODE OF OPERATION
(pF)
C rs
= 0; f = 1 MHz.
80
60
40
20
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
th mb-h
10
= 0.25 K/W, unless otherwise specified.
DS
= 28 V; f = 500 MHz at rated output power.
20
30
(MHz)
500
V DS (V)
f
MDA524
40
V
(V)
28
DS
6
2
(mA)
I
DQ
80
(W)
P
80
L
typ. 13
(dB)
G
11
p
Product specification
BLF546
typ. 60
(%)
50
D