BLF546 NXP Semiconductors, BLF546 Datasheet - Page 10

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
2003 Sep 22
handbook, full pagewidth
UHF push-pull power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the printed circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
L2
straps
L1
L3
C1
C2
L4
L5
C3
Fig.12 Component layout for 500 MHz test circuit.
C4
L6
L7
C5
C10 C11
C7 C8
L8
L9
R2
R6
C6
R3
R4
L10
L11
L12 L14
L13
C9 C18
200
10
L15
C14
C15
C19
L18
L19
L16
L17
L21
C12
L20
C17
R7
R8
C20
C21
V D
V D
L22
L23
C13
C16
C22
L24
L25
C23
C24
L27
L26
straps
Product specification
L28
MDA518
BLF546
85