BLF546 NXP Semiconductors, BLF546 Datasheet - Page 12

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
PACKAGE OUTLINE
2003 Sep 22
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
UHF push-pull power MOS transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
OUTLINE
VERSION
SOT268A
0.193
0.165
4.91
4.19
A
0.065
0.055
1.66
1.39
b
H
U 2
A
A
0.005
0.003
0.13
0.07
c
IEC
12.96
12.44
0.510
0.490
D
0.255
0.245
6.48
6.22
E
1
2
0.254
6.45
JEDEC
e
U 1
H 1
D
q
e
0.080
0.070
2.04
1.77
REFERENCES
5
F
b
17.02
16.00
0.670
0.630
0
3
4
H
w 3
0.324
0.304
w 2
scale
8.23
7.72
EIAJ
H 1
12
5
M
M
C
C
0.135
0.125
3.43
3.17
M
p
10 mm
P
F
B
0.105
0.095
2.67
2.41
Q
w 1
18.42
0.725
M
q
A
M
24.90
24.63
0.980
0.970
U 1
B
M
PROJECTION
0.260
0.250
EUROPEAN
6.61
6.35
U 2
c
Q
0.010 0.020
0.25
w 1
Product specification
0.51
w 2
E
ISSUE DATE
BLF546
0.010
99-03-29
0.25
w 3
SOT268A