BLF546 NXP Semiconductors, BLF546 Datasheet - Page 11

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
2003 Sep 22
handbook, halfpage
handbook, halfpage
UHF push-pull power MOS transistor
Class-B operation; V
Fig.13 Input impedance as a function of frequency
Class-B operation; V
Fig.15 Power gain as a function of frequency;
(dB)
G p
( )
Z i
30
20
10
2
0
2
4
6
8
0
0
0
(series components); typical values per
section.
typical values per section.
DS
DS
200
= 28 V; I
200
= 28 V; I
DQ
DQ
= 2
= 2
x i
r i
400
400
80 mA; P
80 mA; P
f (MHz)
f (MHz)
L
L
= 80 W.
= 80 W.
MDA527
MDA529
600
600
11
handbook, halfpage
Class-B operation; V
Fig.14 Load impedance as a function of frequency
( )
Z L
10
8
6
4
2
0
0
(series components); typical values per
section.
DS
= 28 V; I
200
R L
X L
DQ
= 2
400
80 mA; P
Product specification
f (MHz)
L
= 80 W.
BLF546
MDA528
600