MMBFJ309_Q Fairchild Semiconductor, MMBFJ309_Q Datasheet - Page 2

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MMBFJ309_Q

Manufacturer Part Number
MMBFJ309_Q
Description
RF JFET NCh RF Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBFJ309_Q

Configuration
Single
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
- 25 V
Continuous Drain Current
30 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Off Characteristics
BV
On Characteristics
Small Signal Characteristics
Symbol
V
Re
Re
Re
Re
V
I
(BR)GSS
GS(off)
I
g
G
C
C
g
GSS
DSS
NF
GS(f)
g
g
e
oss
(yos)
(yfs
(yig)
og
(yis)
dg
pg
fs
fg
sg
n
)
Gate-Source Breakdown Voltage I
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain
Current*
Gate-Source Forward Voltage
Common-Source Input
Conductance
Common-Source Output
Conductance
Common-Gate Power Gain
Common-Source Forward
Transconductance
Common-Gate Input
Conductance
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Gate Forward
Conductance
Common-Gate Output
Conductance
Drain-Gate Capacitance
Source-Gate Capacitance
Noise Figure
Equivalent Short-Circuit Input
Noise Voltage
Parameter
T
a
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
G
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= -1.0μA, V
= 10V, I
= 10V, V
= 0, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 0, V
= 0, V
= 10V, I
= 10V, I
= -15V, V
= -15V, V
Test Condition
G
GS
GS
2
= 1.0mA
D
D
D
D
D
D
D
D
D
D
D
D
GS
DS
= -10V, f = 1.0MHz
= -10V, f = 1.0MHz
DS
DS
= 1.0nA
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 1.0kHz
= 10mA, f = 1.0kHz
= 10mA, f = 1.0kHz
= 10mA, f = 1.0kHz
= 10mA, f = 450MHz
= 10mA, f = 100Hz
= 0
= 0
= 0
= 0, T
a
= 125°C
309
310
309
310
309
310
309
310
309
310
309
310
10,000
8,000
Min.
-1.0
-2.0
-25
12
24
13,000
12,000
Typ.
0.25
100
150
0.7
0.5
2.0
4.1
3.0
6.0
16
12
12
20,000
18,000
Max.
-1.0
-1.0
-4.0
-6.5
150
1.0
2.5
5.0
30
60
www.fairchildsemi.com
mmhos
mmhos
mmhos
mmhos
mmhos
μmhos
μmhos
μmhos
μmhos
μmhos
μmhos
μmhos
nV/ Hz
Units
mA
mA
nA
μA
dB
dB
pF
pF
V
V
V
V

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