EC103D1 T/R NXP Semiconductors, EC103D1 T/R Datasheet - Page 8
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EC103D1 T/R
Manufacturer Part Number
EC103D1 T/R
Description
SCRs TAPE SCR
Manufacturer
NXP Semiconductors
Datasheet
1.EC103D1_TR.pdf
(12 pages)
Specifications of EC103D1 T/R
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.35 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.012 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EC103D1,116
NXP Semiconductors
7. Package information
Epoxy meets requirements of UL 94 V-0 at 3.175 mm
EC103D1_2
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H
2.0
1.6
1.2
0.4
0.8
0
junction temperature
50
R
GK
= 1 k
0
50
100
003aaa115
T
j
( C)
150
Rev. 02 — 31 July 2008
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical values
0
GK
= 1 k
50
(1)
Thyristor, sensitive gate
100
EC103D1
© NXP B.V. 2008. All rights reserved.
T
j
003aac341
( C)
150
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