EC103D1 T/R NXP Semiconductors, EC103D1 T/R Datasheet - Page 4

• Manufacturer Part Number: EC103D1 T/R
• Description: SCRs TAPE SCR
• Manufacturer: NXP Semiconductors

Specifications of EC103D1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.012 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EC103D1,116

NXP Semiconductors
EC103D1_2
Product data sheet
Fig 3.
Fig 4.
I
T(RMS)
(A)
I
(A)
TSM
10
10
10
12
10
3
2
8
6
4
2
0
10
10
t
Non-repetitive peak on-state current as a function of pulse duration; maximum values
f = 50 Hz
T
RMS on-state current as a function of surge
duration; maximum values
p
-5
-2
lead
10 ms
= 92 C
10
-1
surge duration (s)
1
10
003aaa117
-4
10
Rev. 02 — 31 July 2008
Fig 5.
I
T(RMS)
(A)
0.8
0.6
0.4
0.2
1
0
-50
RMS on-state current as a function of lead
temperature; maximum values
10
-3
0
50
Thyristor, sensitive gate
I
T
T
j
(init) = 25 C max
t
p
100
t
EC103D1
p
© NXP B.V. 2008. All rights reserved.
(s)
T
003aaa116
003aac340
lead
I
TSM
( C)
t
10
150
-2
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