EC103D1 T/R NXP Semiconductors, EC103D1 T/R Datasheet - Page 3

• Manufacturer Part Number: EC103D1 T/R
• Description: SCRs TAPE SCR
• Manufacturer: NXP Semiconductors

Specifications of EC103D1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.012 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EC103D1,116

NXP Semiconductors
EC103D1_2
Product data sheet
Fig 1.
Fig 2.
I
TSM
(A)
P
(W)
tot
0.6
0.4
0.2
0.0
10
8
6
4
2
0
0.0
1
Form factor a = I
Total power dissipation as a function of average on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
T(RMS)
0.1
/I
T(AV)
4
0.2
10
2.8
Rev. 02 — 31 July 2008
0.3
2.2
1.9
10
0.4
2
conduction
(degrees)
angle
120
180
30
60
90
a =1.57
number of cycles
factor
form
1.57
2.8
2.2
1.9
a
4
0.5
Thyristor, sensitive gate
I
T
T
j(init)
t
I
p
= 25 C max
T(AV)
EC103D1
© NXP B.V. 2008. All rights reserved.
003aaa111
003aaa110
(A)
I
TSM
t
0.6
10
3
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