EC103D1 T/R NXP Semiconductors, EC103D1 T/R Datasheet - Page 5

• Manufacturer Part Number: EC103D1 T/R
• Description: SCRs TAPE SCR
• Manufacturer: NXP Semiconductors

Specifications of EC103D1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.012 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EC103D1,116

NXP Semiconductors
5. Thermal characteristics
Table 4.
EC103D1_2
Product data sheet
Symbol
R
R
Fig 6.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Transient thermal impedance from junction to lead as a function of pulse duration
5
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
10
4
10
3
Conditions
see
printed-circuit board
mounted; lead length 4 mm
Rev. 02 — 31 July 2008
Figure 6
10
2
10
1
Min
-
-
Typ
-
150
P
Thyristor, sensitive gate
1
t
p
T
EC103D1
t
p
© NXP B.V. 2008. All rights reserved.
Max
60
-
(s)
003aaa108
=
t
T
t
p
10
Unit
K/W
K/W
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