EC103D1 T/R NXP Semiconductors, EC103D1 T/R Datasheet - Page 5
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EC103D1 T/R
Manufacturer Part Number
EC103D1 T/R
Description
SCRs TAPE SCR
Manufacturer
NXP Semiconductors
Datasheet
1.EC103D1_TR.pdf
(12 pages)
Specifications of EC103D1 T/R
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.35 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.012 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EC103D1,116
NXP Semiconductors
5. Thermal characteristics
Table 4.
EC103D1_2
Product data sheet
Symbol
R
R
Fig 6.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Transient thermal impedance from junction to lead as a function of pulse duration
5
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
10
4
10
3
Conditions
see
printed-circuit board
mounted; lead length 4 mm
Rev. 02 — 31 July 2008
Figure 6
10
2
10
1
Min
-
-
Typ
-
150
P
Thyristor, sensitive gate
1
t
p
T
EC103D1
t
p
© NXP B.V. 2008. All rights reserved.
Max
60
-
(s)
003aaa108
=
t
T
t
p
10
Unit
K/W
K/W
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