DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: DG636EQ-T1-E3
• Description: 0.5pC Charge Injection, Dual SPDT AS
• Manufacturer: Vishay

Specifications of DG636EQ-T1-E3

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 160 Ohm
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP
• Number Of Switches: Dual
• Switch Configuration: SPDT
• On Resistance (max): 245 Ohm @ 3 V
• On Time (max): 108 ns @ 3 V
• Off Time (max): 76 ns @ 3 V
• Off Isolation (typ): - 58 dB
• Bandwidth: 610 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA/- 0.000001 mA @ +/- 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG636EQ-T1-E3TR

TEST CIRCUITS
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
50 Ω
50 Ω
50 Ω
V+
V
+
A0
A1
ENABLE
A0
A1
ENABLE
A0
A1
ENABLE
GND
GND
GND
V+
V+
V-
V-
V+
V+
V+
S1B or S2B
S1A or S2A
V-
V-
V-
V-
V+
S1A or S2A
S2A or S2B
D1 or D2
SxA - SxB
D1 or D2
D1 or D2
300 Ω
300 Ω
300 Ω
V+
V
S1A
V
V+
S2A
or V
or V
Figure 2. Enable Switching Time
S2A
Figure 3. Break-Before-Make
S2B
35 pF
Figure 1. Transition Time
35 pF
35 pF
V
O
V
V
O
O
V
ENABLE
V
O
V
V
V
V
A0,A1
O
A0,A1
O
V
S1A
V
V
SxA
S1A
or V
or V
or V
S1A or S2A ON
V CC
0 V
S2A
0 V
V
SxB
V
S2A
0 V
0 V
0 V
CC
CC
t
ON
t
TRANS
t
D
50 %
50 %
50 %
50 %
90 %
50 %
90 %
80 %
Vishay Siliconix
t
OFF
t
t
r
f
t
< 5 ns
< 5 ns
TRANS
t
t
90 %
r
f
< 5 ns
< 5 ns
t
t
f
r
www.vishay.com
< 5 ns
< 5 ns
DG636
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