DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: DG636EQ-T1-E3
• Description: 0.5pC Charge Injection, Dual SPDT AS
• Manufacturer: Vishay

Specifications of DG636EQ-T1-E3

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 160 Ohm
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP
• Number Of Switches: Dual
• Switch Configuration: SPDT
• On Resistance (max): 245 Ohm @ 3 V
• On Time (max): 108 ns @ 3 V
• Off Time (max): 76 ns @ 3 V
• Off Isolation (typ): - 58 dB
• Bandwidth: 610 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA/- 0.000001 mA @ +/- 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG636EQ-T1-E3TR

Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
On-Resistance Flatness
Switch Off
Leakage Current
(for 14 pin TSSOP)
Channel On
Leakage Current
(for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
Channel On
Leakage Current
(for 16 pin miniQFN)
Digital Control
Input Current, V
Input Current, V
Input Capacitance
Dynamic Characteristics
Transition Time
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
Bandwidth
Channel-to-Channel
Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On
Capacitance
Total Harmonic
Distortion
e
e
e
e
e
IN
IN
e
e
Low
High
e
e
e
R
V
Symbol
R
FLATNESS
t
ANALOG
C
C
C
R
OIRR
X
TRANS
I
I
I
I
I
I
THD
t
DS(on)
D(off)
D(on)
D(off)
D(on)
S(off)
S(off)
BW
C
t
OFF
D(off)
D(on)
TALK
S(off)
I
I
ON
t
Q
IH
IL
D
IN
ON
V
V
Signal = 1 V
R
R
IN A0, A1 and ENABLE
I
I
S(CLOSE)
Unless Otherwise Specified
S
S
L
L
V
= 1 mA, V
= 1 mA, V
= 50 , C
= 50 , C
g
V
V
V+ = 5.5 V, V- = - 5.5 V,
V+ = 5.5 V, V- = - 5.5 V,
R
R
R
V+ = 5.5 V, V- = - 5.5 V
D
V+ = 5.5 V, V- = - 5.5 V
D
= 0 V, R
I
S
V
V
L
L
L
V+ = 5 V, V- = - 5 V
= ± 4.5 V, V
= ± 4.5 V, V
Under Test = 0.8 V
Under Test = 2.0 V
V
V
IN A0, A1 and ENABLE
IN A0, A1 and ENABLE
Test Conditions
= 300 , C
= 300 , C
= 300 , C
= 1 mA, V
S
S
= 3 V, V
= V
= V
R
V
R
f = 1 MHz
f = 1 MHz
RMS
V
S
L
L
L
D
D
g
L
S
= 600 
D
D
= ± 3 V
= 5 pF, f = 10 MHz
= 5 pF, f = 10 MHz
= 0 , C
= 50 
= - 3 V, 0 V, + 3 V
= - 3 V, 0 V, + 3 V
= 3 V
, 20 Hz to 20 kHz,
= ± 4.5 V
= ± 4.5 V
S(OPEN)
D
S
S
L
L
L
= 2.0 V, 0.8 V
= ± 3 V
=
=
= 35 pF
= 35 pF
= 35 pF
±
±
L
4.5 V
4.5 V
= 1 nF
= 0.0 V,
a
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
0.005
0.005
Typ.
11.3
0.01
- 58
610
- 88
3.4
0.1
2.1
4.2
70
10
20
16
15
15
1
c
- 40 °C to 125 °C - 40 °C to 85 °C
Min.
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 18
- 18
- 18
- 18
- 18
- 18
- 5
- 1
- 1
- 1
5
d
Max.
115
160
105
6.5
0.1
0.1
0.1
0.1
0.1
20
33
18
18
18
18
18
18
70
60
90
52
76
5
5
1
1
1
d
Vishay Siliconix
Min.
- 0.1
- 0.5
- 0.1
- 0.5
- 0.1
- 0.5
- 0.1
- 0.1
- 5
- 1
- 2
- 1
- 2
- 1
- 2
5
d
www.vishay.com
Max.
115
140
DG636
6.5
0.1
0.5
0.1
0.5
0.1
0.5
0.1
0.1
20
22
70
80
60
65
52
56
5
5
1
2
1
2
1
2
d
MHz
Unit
pC
nA
µA
pF
dB
pF
ns
dB

%
V
3