DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: DG636EQ-T1-E3
• Description: 0.5pC Charge Injection, Dual SPDT AS
• Manufacturer: Vishay

Specifications of DG636EQ-T1-E3

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 160 Ohm
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP
• Number Of Switches: Dual
• Switch Configuration: SPDT
• On Resistance (max): 245 Ohm @ 3 V
• On Time (max): 108 ns @ 3 V
• Off Time (max): 76 ns @ 3 V
• Off Isolation (typ): - 58 dB
• Bandwidth: 610 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA/- 0.000001 mA @ +/- 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG636EQ-T1-E3TR

DG636
Vishay Siliconix
www.vishay.com
4
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
Switch Off
Leakage Current
(for 14 pin TSSOP)
Channel On
Leakage Current
(for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
Channel On
Leakage Current
(for 16 pin miniQFN)
Digital Control
Input Current, V
Input Current, V
Input Capacitance
Dynamic Characteristics
Transition Time
Enable Turn-On Time
Enable Turn-Off Time
Break-Before-Make-Time
Charge Injection
Off-Isolation
Crosstalk
Bandwidth
e
e
e
IN
IN
Low
High
e
Symbol
V
Symbol
t
R
t
t
OFF(EN)
ANALOG
ON(EN)
X
R
TRANS
OIRR
I
I
I
I
I
I
I
t
DS(on)
GND
S(off)
D(off)
D(on)
S(off)
D(off)
D(on)
C
BMM
BW
TALK
I+
I-
I
Q
I
L
H
IN
ON
V
V
C
V
f = 10 MHz, R
IN A0, A1 and ENABLE
IN A0, A1 and ENABLE
L
S(CLOSE)
Unless Otherwise Specified
Unless Otherwise Specified
V
V
= 1 nF, R
D
D
I
I
= 1 V/4.5 V, V
R
= 1 V/4.5 V, V
S
S
V
V
V+ = 5.5 V, V- = 0 V,
L
V+ = 5 V, V- = - 5 V
V+ = 5.5 V, V- = 0 V
V+ = 5.5 V, V- = 0 V
V
V
V+ = 5.5 V, V- = 0 V
Under Test = 0.8 V
Under Test = 2.0 V
= 1 mA, V
= 1 mA, V
Test Conditions
IN A0, A1 and ENABLE
IN A0, A1 and ENABLE
V+ = 5 V, V- = 0 V
Test Conditions
S
S
= 300 , C
V
IN
= V
= V
= 3 V, V
GEN
R
f = 1 MHz
= 0 V, or V+
L
D
D
L
= 50 
= 1 V/4.5 V
= 1 V/4.5 V
= 50 , C
= 0 , V
D
D
S(OPEN)
S
S
L
= + 3.5 V
= + 3.5 V
= 2.0 V, 0.8 V
= 2.0 V, 0.8 V
= 4.5 V/1 V
= 4.5 V/1 V
= 35 pF
GEN
L
= 0.0 V,
= 5 pF
= 0 V
a
a
Temp.
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
b
- 0.001
- 0.001
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
0.005
0.005
0.001
Typ.
Typ.
120
- 58
- 81
520
4.3
0.1
36
30
17
23
3
c
c
- 40 °C to 125 °C - 40 °C to 85 °C
- 40 °C to 125 °C - 40 °C to 85 °C
Min.
Min.
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 18
- 18
- 18
- 18
- 18
- 18
- 0.5
- 0.5
- 1
- 1
- 1
- 1
- 1
5
d
d
Max.
Max.
170
250
120
102
0.1
0.1
0.1
0.1
0.1
12
18
18
18
18
18
18
75
70
47
88
0.5
5
5
1
1
1
1
d
S10-1815-Rev. D, 02-Aug-10
d
Document Number: 69901
Min.
Min.
- 0.1
- 0.5
- 0.1
- 0.5
- 0.1
- 0.5
- 0.1
- 0.1
- 0.5
- 0.5
- 1
- 2
- 1
- 2
- 1
- 2
- 1
- 1
5
d
d
Max.
Max.
170
200
0.1
0.5
0.1
0.5
0.1
0.5
0.1
0.1
0.5
10
75
95
70
80
47
63
5
5
1
2
1
2
1
2
1
d
d
MHz
Unit
Unit
pC
µA
nA
µA
pF
dB
ns

V