DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: DG636EQ-T1-E3
• Description: 0.5pC Charge Injection, Dual SPDT AS
• Manufacturer: Vishay

Specifications of DG636EQ-T1-E3

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 160 Ohm
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP
• Number Of Switches: Dual
• Switch Configuration: SPDT
• On Resistance (max): 245 Ohm @ 3 V
• On Time (max): 108 ns @ 3 V
• Off Time (max): 76 ns @ 3 V
• Off Isolation (typ): - 58 dB
• Bandwidth: 610 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA/- 0.000001 mA @ +/- 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG636EQ-T1-E3TR

Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Dynamic Characteristics
Total Harmonic Distortion
Source Off Capacitance
Drain Off Capacitance
Channel On
Capacitance
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
Switch Off Leakage
Current
(for 14 pin TSSOP)
Channel On Leakage
Current
(for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
Channel On
Leakage Current
(for 16 pin miniQFN)
Digital Control
Input Current, V
Input Current, V
Input Capacitance
e
IN
IN
Low
High
e
e
e
V
Symbol
Symbol
R
ANALOG
C
C
C
R
I
I
I
I
I
I
DS(ON)
THD
I
D(off)
D(on)
D(off)
D(on)
S(off)
S(off)
C
GND
D(off)
D(on)
S(off)
I
I+
I
I-
H
L
IN
ON
V
V
Signal = 1 V
IN A0, A1 and ENABLE
IN A0, A1 and ENABLE
Unless Otherwise Specified
Unless Otherwise Specified
V
V
I
I
D
D
S
S
V
V
V+ = 3.3 V, V- = 0 V,
= 1 V/3 V, V
V+ = 3.3 V, V- = 0 V
= 1 V/3 V, V
= 1 mA, V
= 1 mA, V
Under Test = 0.6 V
Under Test = 1.4 V
V+ = 3 V, V- = 0 V
V+ = 3 V, V- = 0 V
V
V
V+ = 3 V, V- = 0 V
IN A0, A1 and ENABLE
IN A0, A1 and ENABLE
V+ = 5 V, V- = 0 V
Test Conditions
Test Conditions
V
S
S
IN
= V
= V
R
f = 1 MHz
f = 1 MHz
RMS,
L
= 0 V, or V+
= 600 
D
D
= 1 V/3 V
= 1 V/3 V
20 Hz to 20 kHz,
D
D
S
S
= + 1.5 V
= + 1.5 V
= 1.4 V, 0.6 V
= 2.0 V, 0.8 V
= 3 V/1 V
= 3 V/1 V
a
a
Temp.
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
b
- 0.001
- 0.001
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
Typ.
0.005
0.005
Typ.
0.009
0.001
11.3
200
4.3
2.5
6.4
5
c
c
- 40 °C to + 125 °C - 40 °C to + 85 °C
- 40 °C to 125 °C - 40 °C to 85 °C
Min.
Min.
- 0.5
- 0.5
- 0.1
- 0.1
- 0.1
- 18
- 18
- 18
- 18
- 18
- 18
- 1
- 1
- 1
- 1
- 1
- 1
- 1
d
d
Max.
Max.
0.5
245
325
1
0.1
0.1
0.1
13
18
18
18
18
18
18
3
6
1
1
1
1
1
d
d
Vishay Siliconix
Min.
- 0.5
- 0.5
- 1
- 1
Min.
- 0.1
- 0.5
- 0.1
- 0.5
- 0.1
- 0.5
- 1
- 2
- 1
- 2
- 1
- 2
- 1
- 1
d
d
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Max.
DG636
0.5
Max.
1
245
290
0.1
0.5
0.1
0.5
0.1
0.5
11
3
6
1
2
1
2
1
2
1
1
d
d
Unit
pF
µA
Unit
%
nA
µA
pF
V

5