DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: DG636EQ-T1-E3
• Description: 0.5pC Charge Injection, Dual SPDT AS
• Manufacturer: Vishay

Specifications of DG636EQ-T1-E3

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 160 Ohm
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP
• Number Of Switches: Dual
• Switch Configuration: SPDT
• On Resistance (max): 245 Ohm @ 3 V
• On Time (max): 108 ns @ 3 V
• Off Time (max): 76 ns @ 3 V
• Off Isolation (typ): - 58 dB
• Bandwidth: 610 MHz
• Supply Voltage (max): 12 V
• Supply Voltage (min): 2.7 V
• Maximum Power Dissipation: 450 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Current (typ): 0.000001 mA/- 0.000001 mA @ +/- 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DG636EQ-T1-E3TR

DG636
Vishay Siliconix
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69901.
www.vishay.com
10
50 Ω
V+
V
A0
A1
ENABLE
g
V
GND
+
Channel
Select
A0
A1
D1 or D2
ENABLE
V+
Insertion Loss = 20 log
V+
GND
V-
V-
R
Figure 7. Crosstalk
g
S1A or S2A
D1 or D2
Figure 5. Insertion Loss
Cross Talk = 20 log
V
V
+
+
V
S1A or S2A
S1B or S2B
V
-
-
A0
A1
ENABLE
SxA or SxB
GND
V
V
V
OUT
V
OUT
IN
V
IN
V
V
V
+
+
V
V
V
V
OUT
OUT
IN
IN
-
-
D1 or D2
50 Ω
V
Network Analyzer
50 Ω
Network Analyzer
g
V
g
R
R
g
g
= 50
= 50 Ω
Figure 4. Charge Injection
1 nF
C
L
V
O
Channel
Select
V
V
ENABLE
O
V+
A0
A1
ENABLE
V
0 V
GND
CC
Figure 8. Source/Drain Capacitance
A0
A1
ENABLE
OFF
GND
V
V
+
+
Off Isolation = 20 log
V-
V-
Charge Injection = ΔV X C
V+
SxA or SxB
V+
V-
V-
D1 or D2
S1A or S2A
S2A or S2B
Figure 6. Off-Isolation
D1 or D2
to
|
|
ON
O
V
V
V
V
OUT
OUT
S10-1815-Rev. D, 02-Aug-10
IN
IN
L
Document Number: 69901
OFF
50 Ω
V
Network Analyzer
g
t
t
r
f
< 5 ns
< 5 ns
ΔV
Impedance
R
Analyzer
O
g
= 50 Ω