FMC6G10US60 Fairchild Semiconductor, FMC6G10US60 Datasheet - Page 6

• Manufacturer Part Number: FMC6G10US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMC6G10US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 17. RBSOA Characteristics
1000
0.01
100
100
0.1
0.1
50
10
10
1
1
0.1
0
5
Common Emitter
V
T
T
I
I
C
C
Single Nonrepetitive
Pulse T
V
R
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
GE
C
C
MAX. (Continuous)
GE
G
MAX. (Pulsed)
= 25 
= 125 ------
=  15V, R
= 20
= 15V
100
J
C
 125
= 25
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Eoff
1
G
200
= 20
Collector Current, I
10
Eon
DC Operation
300
10
400
C
15
[A]
500
1
CE
100
CE
100us
[V]
[V]
600
50us
1000
700
20
Fig 16. Turn-Off SOA Characteristics
Fig 18. Transient Thermal Impedance
Fig 14. Gate Charge Characteristics
0.01
0.1
50
10
15
12
1
9
6
3
0
10
1
0
-5
Common Emitter
R
T
C
L
= 30
= 25
10
-4
Collector-Emitter Voltage, V
Rectangular Pulse Duration [sec]
Gate Charge, Q
10
10
Safe Operating Area
V
10
GE
-3
V
= 20V, T
CC
= 100 V
10
-2
C
= 100
20
g
[ nC ]
100
10
-1
IGBT
DIODE :
CE
200 V
300 V
[V]
10
:
30
0
FMC6G10US60 Rev. A3
1000
10
1