FMC6G10US60 Fairchild Semiconductor, FMC6G10US60 Datasheet

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FMC6G10US60

Manufacturer Part Number
FMC6G10US60
Description
IGBT Modules
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FMC6G10US60

Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
10 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
36 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
PM-AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMC6G10US60
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMC6G10US60
Quantity:
55
©2001 Fairchild Semiconductor Corporation
FMC6G10US60
Compact & Complex Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
• UL Certified No. E209204
• Short circuit rated 10us @ T
• High speed switching
• Low saturation voltage : V
• High input impedance
• Built in 3 phase rectifier circuit
• Fast & soft anti-parallel FWD
Applications
• AC & DC motor controls
• General purpose inverters
• Robotics
• Servo controls
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Inverter
Converter
Common
Mounting Torque
V
V
I
I
I
I
P
T
V
I
I
I
T
T
V
C
CM (1)
F
FM
O
FSM
2
SC
J
STG
CES
GES
D
RRM
ISO
t
Symbol
CE
C
(sat) = 2.2 V @ I
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
1 Cycle Surge Current
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting part Screw
= 100 C, V
GE
= 15V
T
C
C
= 25 C unless otherwise noted
= 10A
Description
R
S
T
@ T
@ T
@ T
@ T
@ AC 1minute
@ M4
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
P
N
Package Code : 21PM-AA
P1
B
Internal Circuit Diagram
EU
GU
GU
FMC7G10US60
-40 to +150
-40 to +125
1200
2500
± 20
1.25
EV
600
100
10
20
10
20
36
10
10
41
U
GV
GV
IGBT
EW
V
GW
GW
FMC6G10US60 Rev. A3
June 2001
Units
N.m
A
us
W
V
V
A
A
A
A
V
A
A
V
2
C
C
s
W
E

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FMC6G10US60 Summary of contents

Page 1

... Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation = 15V GE Package Code : 21PM-AA = 10A Internal Circuit Diagram unless otherwise noted C Description @ 100 100 1minute @ M4 June 2001 IGBT FMC7G10US60 Units 600 V ± 1200 100 -40 to +150 C -40 to +125 C 2500 V 1.25 N.m FMC6G10US60 Rev. A3 ...

Page 2

... V = 300 10A 15V Inductive Load 300 10A 15V Inductive Load 125 300 15V 100 300 10A 15V GE -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 6.0 8.5 V 2.2 2.8 V 660 -- pF 115 -- 158 200 0.36 0 242 350 0.61 0. FMC6G10US60 Rev. A3 ...

Page 3

... A/ 100 100 Converter T C Test Conditions 10A 100 RRM T = 100 C C Parameter Typ Min. Typ. Max. Units -- 1 130 ns -- 110 -- -- 0.7 1 unless otherwise noted Min. Typ. Max. Units -- 1 Max. Units 3.47 C/W 4.0 C/W 3.6 C FMC6G10US60 Rev. A3 ...

Page 4

... C Duty cycle : 50 100 C Power Dissipation = 18W 0 100 150 0 Fig 4. Load Current vs. Frequency 20 Common Emitter T = 125 [V] GE Fig 6. Saturation Voltage vs Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [KHz] 20A 10A Gate - Emitter Voltage FMC6G10US60 Rev. A3 ...

Page 5

... Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter Ton Toff Tr Tf Toff Tf 100 [A] C Fig 12. Turn-Off Characteristics vs. Collector Current =  15V = 300V Ton Tr 10 100 Gate Resistance 15V = 300V Eoff Eon Eoff 10 100 Gate Resistance 15V 25 125 ------ Collector Current, I [A] C FMC6G10US60 Rev ...

Page 6

... Fig 16. Turn-Off SOA Characteristics 10 1 0.1 0.01 500 600 700 -5 10 [V] CE Fig 18. Transient Thermal Impedance = 30 = 25 300 100 V CC 200 Gate Charge Safe Operating Area V = 20V 100 100 1000 Collector-Emitter Voltage, V [V] CE IGBT : DIODE : - Rectangular Pulse Duration [sec] FMC6G10US60 Rev ...

Page 7

... Common Cathode 25 125 Forward Voltage, V Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation 0 [V] F Fig 20. Reverse Recovery Characteristics Common Cathode di/dt = 20A 25 100 Forward Current, I [A] F FMC6G10US60 Rev. A3 ...

Page 8

... Package Dimension 21PM-AA (FS PKG CODE BJ) ©2001 Fairchild Semiconductor Corporation Dimensions in Millimeters FMC6G10US60 Rev. A3 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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