FMC6G15US60 Fairchild Semiconductor, FMC6G15US60 Datasheet - Page 5

• Manufacturer Part Number: FMC6G15US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMC6G15US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 15 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
1000
1800
1500
1200
100
100
900
600
300
10
0
1
5
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
CC
C
C
Gate Resistance
C
C
= 15A
GE
Collector Current
= 25 
= 125 ------
= 25 
= 125 ------
= 300V, V
=  15V, R
1
Cies
Coes
Cres
10
Collector - Emitter Voltage, V
GE
Gate Resistance, R
G
=  15V
= 13
Collector Current, I
15
10
20
G
C
10
[ ]
Common Emitter
V
T
[A]
GE
C
CE
= 25
= 0V, f = 1MHz
[V]
25
100
Ton
Tr
Toff
Toff
Tf
Tf
30
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
1000
100
100
100
10
1
1
5
Toff
Toff
Tf
Tf
Common Emitter
V
I
T
T
Gate Resistance
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
C
C
C
C
C
CC
CC
C
C
GE
= 15A
= 15A
Collector Current
= 25 
= 125 ------
= 25 
= 125 ------
= 25 
= 125 ------
= 300V, V
= 300V, V
=  15V, R
10
GE
GE
Gate Resistance, R
Gate Resistance, R
G
=  15V
=  15V
= 13
Collector Current, I
15
10
10
20
G
G
C
[ ]
[ ]
[A]
25
100
100
FMC6G15US60 Rev. A3
Ton
Eoff
Eon
Eoff
Tr
30