FMC6G15US60 Fairchild Semiconductor, FMC6G15US60 Datasheet - Page 3

• Manufacturer Part Number: FMC6G15US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMC6G15US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 15 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Electrical Characteristics of the DIODE
Electrical Characteristics of the DIODE
Thermal Characteristics
V
t
I
Q
V
I
Inverter
Converter
Weight
rr
rr
RRM
Symbol
Symbol
FM
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Diode Forward Voltage
Repetitive Reverse Current
R
R
R
Symbol
JC
JC
JC
Parameter
Parameter
Weight of Module
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Parameter
I
di / dt = 30 A/us
V
I
F
I
F
F
R
= 15A
= 15A
= 20A
= V
RRM
Test Conditions
Test Conditions
@ Inverter
@ Converter
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
C
C
C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C
= 100 C
T
C
= 25 C unless otherwise noted
T
Typ.
C
60
--
--
--
= 25 C unless otherwise noted
Min.
Min.
--
--
--
--
--
--
--
--
--
--
--
--
Max.
2.77
3.5
2.7
Typ.
Typ.
--
100
1.9
2.0
1.0
1.3
1.1
1.0
75
40
70
--
5
Max.
Max.
130
100
2.8
1.8
1.5
--
--
--
--
--
--
8
FMC6G15US60 Rev. A3
Units
C/W
C/W
C/W
g
Units
Units
mA
nC
ns
V
A
V