FMM6G30US60 Fairchild Semiconductor, FMM6G30US60 Datasheet - Page 5

• Manufacturer Part Number: FMM6G30US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMM6G30US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 30 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Fig 7. Turn-On Characteristics vs.
Fig 9. Switching Loss vs. Gate Resistance
Fig 11. Turn-Off Characteristics vs.
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
C
C
CC
Common Emitter
V
I
T
T
= 30A
C
C
C
Gate Resistance
GE
= 25 ] øø
= 125 ] ------
C
C
CC
Collector Current
= 300V, V
= 30A
= 25] øø
= 125] ------
= 25] øø
= 125] ------
=  15V, R
= 300V, V
GE
GE
G
=  15V
= 15 Ω
=  15V
Ω
Ω
Fig 8. Turn-Off Characteristics vs.
Fig 10. Turn-On Characteristics vs.
Fig 12. Switching Loss vs. Collector Current
Common Emitter
V
I
T
T
C
CC
C
C
= 30A
= 25 ] øø
= 125 ] ------
Common Emitter
V
T
T
= 300V, V
Common Emitter
V
T
T
Gate Resistance
GE
C
C
C
C
GE
= 25 ] øø
= 125 ] ------
Collector Current
=  15V, R
= 25] øø
= 125] ------
=  15V, R
GE
=  15V
G
G
= 15 Ω
= 15 Ω
Ω
FMM6G30US60 Rev. A