BAS45A,113 NXP Semiconductors, BAS45A,113 Datasheet - Page 5

• Manufacturer Part Number: BAS45A,113
• Description: Diodes (General Purpose, Power, Switching) DIODE LOW LEAKAGE
• Manufacturer: NXP Semiconductors

Specifications of BAS45A,113

• Product: Switching Diodes
• Peak Reverse Voltage: 125 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 1500 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.001 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: SOD-68
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031240113 BAS45A T/R

NXP Semiconductors
1996 Mar 13
handbook, full pagewidth
handbook, halfpage
Low-leakage diode
V
Fig.5
R
= 125 V.
V = V
(nA)
I R
10
10
10
10
10
R = 50
1
4
3
2
1
S
R
0
Reverse current as a function of junction
temperature.
I x R
F
Ω
S
50
I F
D.U.T.
Fig.7 Reverse recovery time test circuit and waveforms.
max
100
typ
T ( C)
OSCILLOSCOPE
j
SAMPLING
o
R = 50
MGA881
MBD456
i
150
Ω
V R
5
10%
handbook, halfpage
t r
f = 1 MHz; T
Fig.6
90%
(pF)
C d
input signal
3
2
1
0
0
Diode capacitance as a function of reverse
voltage; typical values.
t p
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
V R (V)
BAS45A
t rr
MBG524
20
(1)
t