BAS45A,113 NXP Semiconductors, BAS45A,113 Datasheet - Page 3

• Manufacturer Part Number: BAS45A,113
• Description: Diodes (General Purpose, Power, Switching) DIODE LOW LEAKAGE
• Manufacturer: NXP Semiconductors

Specifications of BAS45A,113

• Product: Switching Diodes
• Peak Reverse Voltage: 125 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 1500 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.001 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: SOD-68
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031240113 BAS45A T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
Low-leakage diode
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
R
R
I
I
I
V
V
V
V
= 10 mA; R
= 1 mA; see Fig.7
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 100 mA
= 125 V; E
= 30 V; T
= 125 V; T
= 125 V; T
8 mm from the body
lead length 10 mm; note 1
R
3
CONDITIONS
L
= 0; see Fig.6
j
= 100 Ω; measured at
= 125 °C; E
j
j
max
= 125 °C; E
= 150 °C; E
CONDITIONS
= 100 lx
F
= 10 mA to
max
max
max
= 100 lx
= 100 lx
= 100 lx
TYP.
1.5
VALUE
−
−
−
−
−
−
−
−
300
500
Product data sheet
MAX.
1 000
780
860
300
500
BAS45A
1
2
4
−
UNIT
K/W
K/W
mV
mV
mV
nA
nA
nA
μA
pF
μs
UNIT