BAS45A,113 NXP Semiconductors, BAS45A,113 Datasheet - Page 4

• Manufacturer Part Number: BAS45A,113
• Description: Diodes (General Purpose, Power, Switching) DIODE LOW LEAKAGE
• Manufacturer: NXP Semiconductors

Specifications of BAS45A,113

• Product: Switching Diodes
• Peak Reverse Voltage: 125 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 1500 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.001 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: SOD-68
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031240113 BAS45A T/R

NXP Semiconductors
GRAPHICAL DATA
1996 Mar 13
handbook, halfpage
handbook, full pagewidth
Low-leakage diode
Device mounted on a printed-circuit board without metallization pad.
Fig.2
Fig.4
Based on square wave currents;T
(mA)
I FSM
I F
(A)
10
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient temperature.
Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
j
= 25 °C prior to surge.
10
T amb (
o
C)
MBG522
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
300
200
100
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
0.5
10
3
(1)
1.0
t p (μs)
(2)
Product data sheet
(3)
V F (V)
BAS45A
MBG523
MBG704
1.5
10
4