BAS45A,113 NXP Semiconductors, BAS45A,113 Datasheet - Page 2

• Manufacturer Part Number: BAS45A,113
• Description: Diodes (General Purpose, Power, Switching) DIODE LOW LEAKAGE
• Manufacturer: NXP Semiconductors

Specifications of BAS45A,113

• Product: Switching Diodes
• Peak Reverse Voltage: 125 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 1500 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 0.001 uA
• Operating Temperature Range: + 175 C
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Package / Case: SOD-68
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934031240113 BAS45A T/R

NXP Semiconductors
FEATURES
• Continuous reverse voltage:
• Repetitive peak forward current:
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 μs.
APPLICATION
• Low leakage current applications.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
max. 125 V
max. 625 mA
stg
j
RRM
R
tot
Low-leakage diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
total power dissipation
storage temperature
junction temperature
PARAMETER
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
see Fig.2; note 1
surge; see Fig.4
T
amb
handbook, halfpage
t
t
t
p
p
p
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
= 1 μs
= 1 ms
= 1 s
= 25 °C
2
k
CONDITIONS
j
= 25 °C prior to
a
MIN.
−65
−
−
−
−
−
−
−
−
−
MAM156
Product data sheet
+175
MAX.
125
125
250
625
300
175
BAS45A
4
1
0.5
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT