H11A1VM Fairchild Semiconductor, H11A1VM Datasheet - Page 6
H11A1VM
Manufacturer Part Number
H11A1VM
Description
Transistor Output Optocouplers Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Specifications of H11A1VM
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5300 Vrms
Maximum Forward Diode Voltage
1.5 V
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-6
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.5V
Forward Current
60mA
Collector-emitter Voltage
30V
Package Type
PDIP W
Power Dissipation
250mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
H11A1VM_NL
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.3
Typical Performance Curves
1000
100
0.1
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
0.1
10
Fig. 7 Switching Speed vs. Load Resistor
I
V
T
F
A
CC
= 10 mA
= 25 C
Fig. 9 Normalized t
100
INPUT
= 10 V
R
BE
R-LOAD RESISTOR (k
- BASE RESISTANCE (k
1
I
F
T
off
T
T
1000
R
on
r
TEST CIRCUIT
BE
T
f
off
vs. R
Figure 11. Switching Time Test Circuit and Waveforms
10
I
V
C
CC
10000
BE
= 10V
OUTPUT
R
V
I
R
(Continued)
C
CC =
L
L
= 2 mA
Adjust I
= 100
10 V
F
to produce I
100000
100
C
= 2 mA
6
10000
0.001
1000
0.01
100
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
1
10%
90%
0
10
V
T
t
on
A
CE
= 25 C
Fig. 10 Dark Current vs. Ambient Temperature
= 10 V
20
t
r
WAVE FORMS
T
Fig. 8 Normalized t
100
A
R
BE
- AMBIENT TEMPERATURE ( C)
- BASE RESISTANCE (k
40
t
t
f
off
INPUT PULSE
OUTPUT PULSE
1000
60
on
vs. R
10000
BE
www.fairchildsemi.com
V
I
R
80
C
CC =
L
= 2 mA
= 100
10 V
100000
100