H11A1VM Fairchild Semiconductor, H11A1VM Datasheet

Transistor Output Optocouplers Optocoupler Phototransistor

H11A1VM

Manufacturer Part Number
H11A1VM
Description
Transistor Output Optocouplers Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of H11A1VM

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
5300 Vrms
Maximum Forward Diode Voltage
1.5 V
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-6
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.5V
Forward Current
60mA
Collector-emitter Voltage
30V
Package Type
PDIP W
Power Dissipation
250mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
H11A1VM_NL
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features
Applications
Schematic
UL recognized (File # E90700, Volume 2)
VDE recognized (File # 102497)
– Add option V (e.g., 4N25VM)
Power supply regulators
Digital logic inputs
Microprocessor inputs
1
2
3
PIN 1. ANODE
NC
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
5
4
Description
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon pho-
totransistor in a 6-pin dual in-line package.
Package Outlines
January 2009
www.fairchildsemi.com

Related parts for H11A1VM

H11A1VM Summary of contents

Page 1

... NC PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 Description The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon pho- totransistor in a 6-pin dual in-line package. Package Outlines January 2009 ...

Page 2

... Isolation Characteristics Symbol Characteristic V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO *Typical values 25°C A ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0 25°C unless otherwise specified) A Parameter = 25° 25° 25° 25°C unless otherwise specified) A Test Conditions ...

Page 3

... Collector to Emitter V Collector-Emitter CE (SAT) Saturation Voltage AC CHARACTERISTICS T Non-Saturated ON Turn-on Time T Turn-off Time OFF * Typical values 25°C A ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 (Continued 25°C unless otherwise specified) A Test Conditions Device I = 10mA 10V 4N35M, 4N36M 4N37M H11A1M H11A5M 4N25M, 4N26M ...

Page 4

... T - AMBIENT TEMPERATURE ( C) A Fig. 5 CTR vs. RBE (Saturated) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 R - BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 1.6 1.4 1.2 1 100 C A 0.2 0.0 100 1.0 ...

Page 5

... R - BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3.5 3.0 f 2.5 2.0 1.5 1.0 0.5 10 100 10 vs. R off BE 10000 ...

Page 6

... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...

Page 7

... Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format. ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 Order Entry Identifier (Example) 4N25M ...

Page 8

... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2005 Fairchild Semiconductor Corporation 4NXXM, H11AXM Rev. 1.0.2 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 8 Ø1.5 MIN 1 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ CROSSVOLT™ ...

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