QSC114C Fairchild Semiconductor, QSC114C Datasheet - Page 3

• Manufacturer Part Number: QSC114C
• Description: Photodetector Transistors 4mA PHOTO TRANS
• Manufacturer: Fairchild Semiconductor
• Type: IR Chipr

Specifications of QSC114C

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 5 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 5 us
• Package / Case: T-1
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 4mA
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 8deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / Rohs Status: Compliant

©2005 Fairchild Semiconductor Corporation
QSC112, QSC113, QSC114 Rev. 1.0.2
Typical Performance Curves
10
10
10
10
10
10
10
10
10
-1
-2
-3
0
1
2
1
0
-1
0.1
0
V
GaAs Light Source
CE
Figure 3. Dark Current vs. Collector - Emitter Voltage
= 5V
5
Figure 1. Light Current vs. Radiant Intensity
V
E
CE
e
- Radiant Intensity (mW/cm
10
- Collector-Emitter Voltage (V)
15
10
10
10
10
10
10
4
3
2
1
0
-1
25
Normalized to:
V
T
20
A
CE
= 25
= 25V
2
)
Figure 5. Dark Current vs. Ambient Temperature
o
C
25
T
A
50
- Ambient Temperature (
1
30
3
180°
170°
160°
1.0
150°
10
10
10
10
140°
1
0
-1
-2
0.1
V
75
0.8
CE
o
C )
= 25V
130°
Figure 4. Light Current vs. Collector - Emitter Voltage
V
0.6
CE
120°
Figure 2. Angular Response Curve
= 10V
0.4
110°
V
CE
0.2
100°
100
- Collector-Emitter Voltage (V)
0.0
0.0
90°
1
I e = 1mW/cm
I e = 0.5mW/cm
I e = 0.2mW/cm
I e = 0.1mW/cm
80°
0.2
70°
0.4
2
2
2
2
60°
0.6
50°
Normalized to:
V
I e = 0.5mW/cm
T
www.fairchildsemi.com
CE
A
= 25
0.8
10
= 5V
40°
o
30°
C
1.0
20°
10°
0°
2