QSB363GR Fairchild Semiconductor, QSB363GR Datasheet - Page 4
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QSB363GR
Manufacturer Part Number
QSB363GR
Description
Photodetector Transistors Phototransistor Si Infrared
Manufacturer
Fairchild Semiconductor
Type
Photo Transistorr
Datasheet
1.QSB363.pdf
(5 pages)
Specifications of QSB363GR
Maximum Power Dissipation
75 mW
Maximum Dark Current
100 nA
Collector- Emitter Voltage Vceo Max
30 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Rise Time
15 us
Package / Case
T-3/4
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
1.5mA
Power Dissipation
75mW
Peak Wavelength
940nm
Half-intensity Angle
24deg
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
2
Package Type
T-3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSB363GR
Manufacturer:
FSC
Quantity:
4 000
Company:
Part Number:
QSB363GR
Manufacturer:
TOSHIBA
Quantity:
45 700
QSB363 Rev. 1.0.2
Package Dimensions
Features
Gull Wing Lead Configuration
Yoke Lead Configuration
R0.016±.004
(0.4±0.1)
0.032
(0.83
Three lead forming options: Gull Wing, Yoke and Z-Bend
Compatible with automatic placement equipment
Supplied on tape and reel or in bulk packaging
Compatible with vapor phase reflow solder processes
+0.005
–0
+0.13
–0
R0.031±.004
(0.8±0.1)
Cathode
ø0.075±0.008
Cathode
(ø1.9±0.2)
)
ø0.075±0.008
R0.031±.004
(0.8±0.1)
(1.9±0.2)
0.043±0.008
(1.1±0.2)
–
0.043±0.008
0.098±0.004
0.157±0.008
0.012±0.004
(0.3±0.1)
(1.1±0.2)
0.185±0.008 (4.7±0.2)
0.291±0.008 (7.4±0.2)
Polarity
(2.5±0.1)
(4.0±0.2)
–
C L
0.098±0.004
0.055±0.008
(1.4±0.2)
(2.5±0.1)
Polarity
C L
+
0.055±0.008
(1.4±0.2)
+
0.029±0.004
(0.75±0.1)
0.029±0.004
0.051±0.004
(0.75±0.1)
(1.3±0.1)
0.055±0.004
(1.4±0.1)
0.051±0.004
(1.3±0.1)
0.055±0.004
4
(1.4±0.1)
Z-Bend Lead Configuration
0.023
(0.6
+0.005
–0
+0.13
–0
Cathode
ø0.075±0.008
R0.031±.004
(0.8±0.1)
)
(1.9±0.2)
0.043±0.008
0.169±0.008 (4.3±0.2)
(1.1±0.2)
0.228±0.008 (5.8±0.2)
–
0.098±0.004
0.12±0.008
(3.05±0.2)
(2.5±0.1)
Polarity
C L
0.055±0.008
(1.4±0.2)
+
0.029±0.004
www.fairchildsemi.com
(0.75±0.1)
0.051±0.004
(1.3±0.1)
0.055±0.004
(1.4±0.1)