QSB363GR Fairchild Semiconductor, QSB363GR Datasheet

QSB363GR

Manufacturer Part Number

QSB363GR

Description

Photodetector Transistors Phototransistor Si Infrared

Manufacturer

Fairchild Semiconductor

Type

Photo Transistorr

Datasheet

1.QSB363.pdf (5 pages)

Specifications of QSB363GR

Maximum Power Dissipation

75 mW

Maximum Dark Current

100 nA

Collector- Emitter Voltage Vceo Max

30 V

Fall Time

15 us

Maximum Operating Temperature

+ 85 C

Minimum Operating Temperature

- 25 C

Rise Time

15 us

Package / Case

T-3/4

Phototransistor Type

Phototransistor

Polarity

NPN

Number Of Elements

Lens Type

Black Transparent

Emitter-collector Voltage (max)

Collector-emitter Voltage

30V

Collector-emitter Sat Volt (max)

0.4V

Dark Current (max)

100nA

Light Current

1.5mA

Power Dissipation

75mW

Peak Wavelength

940nm

Half-intensity Angle

24deg

Operating Temp Range

-25C to 85C

Operating Temperature Classification

Commercial

Mounting

Surface Mount

Pin Count

Package Type

T-3/4

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

QSB363GR

Manufacturer:

FSC

Quantity:

4 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

QSB363GR

Manufacturer:

TOSHIBA

Quantity:

45 700

Current page: 1 of 5
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QSB363 Rev. 1.0.2

QSB363

Subminiature Plastic Silicon Infrared Phototransistor

Features

Package Dimensions

.118 (3.0)

.102 (2.6)

NOTES:

1. Dimensions are in inches (mm).

2. Tolerance of ± .010 (.25) on all non nominal dimensions

NPN Silicon Phototransistor

T-3/4 (2mm) Surface Mount Package

Medium Wide Beam Angle, 24°

Black Plastic Package

Matched Emitters: QEB363 or QEB373

0.024 (0.6)

0.016 (0.4)

unless otherwise specified.

0.008 (0.21)

0.004 (0.11)

0.074 (1.9)

0.276 (7.0)

MIN

0.106 (2.7)

0.091 (2.3)

.059 (1.5)

.051 (1.3)

0.019 (0.5)

0.012 (0.3)

0.024 (0.6)

EMITTER

0.087 (2.2)

0.071 (1.8)

Description

The QSB363 is a silicon phototransistor encapsulated in a black

infrared transparent T-3/4 package.

0.055 (1.4)

Daylight Filter

Tape & Reel Option (See Tape & Reel Speciﬁcations)

Lead Form Options: Gullwing, Yoke, Z-Bend

SCHEMATIC

COLLECTOR

EMITTER

November 2005

www.fairchildsemi.com

Related parts for QSB363GR

QSB363GR Summary of contents

Page 1

... NOTES: 1. Dimensions are in inches (mm). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSB363 Rev. 1.0.2 Daylight Filter Tape & Reel Option (See Tape & Reel Speciﬁcations) Lead Form Options: Gullwing, Yoke, Z-Bend ...

Page 2

Absolute Maximum Ratings Parameter Operating Temperature Storage Temperature (2,3,4) Soldering Temperature (Iron) (2,3) Soldering Temperature (Flow) Collector Emitter Voltage Emitter Collector Voltage (1) Power Dissipation Notes 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA ﬂux is recommended. ...

Page 3

Typical Performance Curves Fig. 1 Collector Power Dissipation vs. Ambient Temperature 100 - Ambient Temperature T Fig. 3 Relative Collector Current vs. Ambient Temperature 160 140 E ...

Page 4

Package Dimensions Features Three lead forming options: Gull Wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reﬂow solder processes Gull Wing Lead Conﬁguration 0.098±0.004 (2.5±0.1) ø0.075±0.008 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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