2N5551 Fairchild Semiconductor, 2N5551 Datasheet - Page 2

• Manufacturer Part Number: 2N5551
• Description: TRANSISTOR, NPN, TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5551

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 160V
• Power Dissipation Pd: 625mW
• Dc Collector Current: 600mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-92
• No. Of: RoHS Compliant
• Dc Current Gain Hfe: 80
• Rohs Compliant: Yes

2N5551- MMBT5551 Rev. B
Electrical Characteristics
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
Off Characteristics
V
V
V
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
C
C
H
NF
CBO
EBO
T
Symbol
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
fe
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
Parameter
T
a
= 25°C unless otherwise noted
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
I
R
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
BE
S
= 1.0 mA, V
= 250 uA, V
= 10uA, I
= 1.0mA, I
= 100µA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 10mA, I
= 50mA, I
= 10mA, I
= 50mA, I
= 10mA, V
=1.0 kΩ, f=10 Hz to 15.7 kHz
= 120V, I
= 120V, I
= 4.0V, I
= 10V, I
= 0.5V, I
Test Condition
2
C
E
B
B
B
B
C
C
B
E
CE
CE
CE
= 0
E
E
CE
CE
CE
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 0, f = 1.0MHz
= 0
= 0
= 0, f = 1.0MHz
= 0
= 0
= 0, T
= 5.0V
= 5.0V
= 10V,
= 10 V, f = 1.0kHz
= 5.0 V,
= 5.0V
a
= 100°C
Min.
160
180
100
6.0
80
80
30
50
Max.
0.15
0.20
250
300
250
1.0
1.0
6.0
8.0
50
50
50
20
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Units
MHz
nA
µA
nA
pF
pF
dB
V
V
V
V
V
V
V