SUD50N03-11-T1-E3 Vishay, SUD50N03-11-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-11-T1-E3
• Description: N CHANNEL MOSFET, 30V, 50A
• Manufacturer: Vishay

Specifications of SUD50N03-11-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 62.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71187
S-81225-Rev. D, 02-Jun-08
2000
1600
1200
200
160
120
800
400
80
40
60
50
40
30
20
10
0
0
0
0
0
0
C
T
5
rss
20
C
2
V
V
= - 55 °C
DS
DS
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
10
I
D
Capacitance
- Drain Current (A)
40
V
4
GS
= 10 thru 8 V
C
15
oss
7 V
60
6
20
80
8
C
25
25 °C
125 °C
iss
6 V
5 V
4 V
3 V
2 V
100
10
30
0.04
0.03
0.02
0.01
0.00
100
10
80
60
40
20
8
6
4
2
0
0
0
0
0
V
I
D
DS
= 50 A
On-Resistance vs. Drain Current
= 15 V
1
20
4
V
Transfer Characteristics
GS
V
Q
GS
g
- Gate-to-Source Voltage (V)
I
- Total Gate Charge (nC)
= 4.5 V
2
D
Gate Charge
- Drain Current (A)
40
8
SUD50N03-11
Vishay Siliconix
T
3
C
= - 55 °C
60
12
4
V
www.vishay.com
GS
125 °C
80
16
= 10 V
5
25 °C
100
20
6
3