SUD50N03-06P-E3 Vishay, SUD50N03-06P-E3 Datasheet
SUD50N03-06P-E3
Specifications of SUD50N03-06P-E3
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SUD50N03-06P-E3 Summary of contents
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... UNLESS OTHERWISE NOTED) A Symbol T = 25_C 25_C 0 25_C 25_C C T Symbol sec R R Steady State R SUD50N02-06P Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency D 100% R Tested g APPLICATIONS D Synchronous Buck DC/DC Conversion − Desktop − Server Limit " ...
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... SUD50N02-06P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance a Dynamic ...
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... T − Junction Temperature (_C) J Document Number: 71931 S-32425—Rev. C, 24-Nov-03 0.010 0.008 25_C 125_C 0.006 0.004 0.002 0.000 100 100 125 150 175 SUD50N02-06P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...
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... SUD50N02-06P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...