SUD50N03-06AP-E3 Vishay, SUD50N03-06AP-E3 Datasheet
SUD50N03-06AP-E3
Specifications of SUD50N03-06AP-E3
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SUD50N03-06AP-E3 Summary of contents
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... 0.0078 @ TO-252 Top View Ordering Information: SUD50N03-06AP—E3 (Lead (Pb)-free) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) 175_C) J Pulsed Drain Current Continuous Source-Drain Diode Current Continuous Source Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy ...
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... SUD50N03-06AP Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance ...
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... Drain Current (A) D Gate Charge (nC) g Document Number: 73540 S–52237—Rev. A, 24-Oct-05 New Product 2.0 2.5 3.0 80 100 = SUD50N03-06AP Vishay Siliconix Transfer Characteristics –55_C 25_C 125_C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Capacitance 5000 C iss 4000 3000 ...
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... SUD50N03-06AP Vishay Siliconix Source-Drain Diode Forward Voltage 100.000 10.000 T = 150_C J 1.000 0.100 0.010 0.001 0.0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Threshold Voltage 2.3 2.1 1.9 = 250 1.7 1.5 1.3 1.1 0.9 0.7 0.5 –50 – – Temperature (_C) J www.vishay.com ...
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... Current De-Rating 100 75 50 Limited by Package 100 T – Case Temperature (_C) C Document Number: 73540 S–52237—Rev. A, 24-Oct-05 New Product _ 125 150 175 SUD50N03-06AP Vishay Siliconix Power De-Rating 100 125 T – Case Temperature (_C) C www.vishay.com 150 175 5 ...
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... SUD50N03-06AP Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty Cycle = 0.5 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 – Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...