SUD50N03-11-E3 Vishay, SUD50N03-11-E3 Datasheet
SUD50N03-11-E3
Specifications of SUD50N03-11-E3
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SUD50N03-11-E3 Summary of contents
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... 25_C 100_C 25_C 25_C stg Symbol sec R R thJA Steady State R thJC R thJL SUD50N03-11 Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% R Tested Limit 30 " 100 50 c 62 175 Typical Maximum 2.4 4 4.8 www.vishay.com Unit Unit _C/W ...
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... SUD50N03-11 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... C 400 rss Drain-to-Source Voltage (V) DS Document Number: 71187 S-31724—Rev. C, 18-Aug-03 100 0.04 25_C 0.03 125_C 0.02 0.01 0.00 80 100 C iss SUD50N03-11 Vishay Siliconix Transfer Characteristics 55_C 125_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current Drain Current (A) D Gate Charge ...
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... SUD50N03-11 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 100 T - Case Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. www.vishay.com 4 100 ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...