SUD50N03-11-T1-E3 Vishay, SUD50N03-11-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD50N03-11-T1-E3
• Description: N CHANNEL MOSFET, 30V, 50A
• Manufacturer: Vishay

Specifications of SUD50N03-11-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 62.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N03-11
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics T
Continuous Current
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
c
a
c
c
c
c
c
c
b
b
b
J
= 25 °C, unless otherwise noted
b
V
Symbol
R
V
(BR)DSS
I
t
t
I
C
I
DS(on)
C
V
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
g
R
SM
I
t
oss
t
t
rss
SD
iss
S
rr
fs
gs
gd
r
f
g
g
C
= 25 °C
I
V
D
V
V
V
DS
GS
GS
≅ 50 A, V
DS
I
= 24 V, V
F
V
= 5 V, I
V
= 0 V, V
V
V
= 15 V, V
V
V
V
I
= 50 A, dI/dt = 100 A/µs
DS
V
V
DS
DD
F
GS
DS
GS
DS
GS
DS
Test Conditions
= 100 A, V
= 0 V, V
= V
= 0 V, I
= 15 V, R
= 24 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
= 5 V, V
GEN
D
GS
DS
GS
= 20 A, T
GS
, I
= 10 V, R
= 25 V, f = 1 MHz
= 0 V, T
D
GS
D
= 5 V, I
GS
= 250 µA
D
D
GS
L
GS
D
= 250 µA
= ± 20 V
= 25 A
= 20 A
= 0.3 Ω
= 15 A
= 5 V
= 0 V
= 0 V
J
J
= 125 °C
D
G
= 125 °C
= 50 A
= 2.5 Ω
Min.
0.8
0.5
30
50
10
Typ.
0.009
0.014
1130
400
175
4.5
12
10
18
30
4
8
6
S-81225-Rev. D, 02-Jun-08
a
Document Number: 71187
± 100
0.011
0.018
0.017
Max.
3.4
1.5
50
20
12
15
30
50
80
50
1
9
Unit
nA
µA
pF
nC
ns
ns
Ω
Ω
V
A
S
A
V