SUD50N03-09P-T1-E3 Vishay, SUD50N03-09P-T1-E3 Datasheet

N CHANNEL MOSFET, 30V, 63A

SUD50N03-09P-T1-E3

Manufacturer Part Number
SUD50N03-09P-T1-E3
Description
N CHANNEL MOSFET, 30V, 63A
Manufacturer
Vishay
Datasheet

Specifications of SUD50N03-09P-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
63A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
65.2W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Product Summary
Absolute Maximum Ratings (
Thermal Resistance Ratings
Notes
a.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70265.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on FR4 Board, t
DS
30
30
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
(V)
Order Number:
SUD50N03-10
G
TO-252
0.019 @ V
Top View
0.010 @ V
a
a
D
S-57253—Rev. E, 24-Feb-98
r
Parameter
a
DS(on)
N-Channel 30-V (D-S), 175 C MOSFET
S
Parameter
GS
GS
( )
10 sec.
= 4.5 V
Drain Connected to Tab
= 10 V
a
Siliconix was formerly a division of TEMIC Semiconductors
T
A
I
D
T
T
T
T
A
A
A
C
= 25 C Unless Otherwise Noted
(A)
15
12
= 25 C
= 100 C
= 25 C
= 25 C
Phone (408)988-8000
Symbol
R
R
thJA
thJC
G
Symbol
N-Channel MOSFET
T
V
V
J
I
P
P
, T
I
I
DM
I
DS
GS
D
D
S
D
D
stg
FaxBack (408)970-5600
D
S
Typical
–55 to 175
SUD50N03-10
Limit
30
15
83
4
100
20
15
10
a
Maximum
www.siliconix.com
1.8
30
Siliconix
)
Unit
Unit
W
W
V
V
A
A
C/W
C/W
C
1

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SUD50N03-09P-T1-E3 Summary of contents

Page 1

... Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S-57253—Rev. E, 24-Feb- N-Channel MOSFET Unless Otherwise Noted A Symbol 100 stg Symbol Typical R thJA R thJC Phone (408)988-8000 FaxBack (408)970-5600 Siliconix was formerly a division of TEMIC Semiconductors SUD50N03-10 Siliconix ) Limit Unit 100 –55 to 175 C Maximum Unit 30 C/W C/W 1.8 www.siliconix.com 1 ...

Page 2

... SUD50N03-10 Siliconix Specifications ( Unless Otherwise Noted) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State Resistance r DS(on) b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... S-57253—Rev. E, 24-Feb- On-Resistance vs. Drain Current = – 125 iss Phone (408)988-8000 FaxBack (408)970-5600 Siliconix was formerly a division of TEMIC Semiconductors SUD50N03-10 Siliconix Transfer Characteristics T = – 125 C – Gate-to-Source Voltage ( – Drain Current (A) D Gate Charge Q – Total Gate Charge (nC) g www.siliconix.com ...

Page 4

... SUD50N03-10 Siliconix Typical Characteristics (25 C Unless Otherwise Noted) On-Resistance vs. Junction Temperature – Junction Temperature ( C) J Thermal Ratings Maximum Drain Current vs. Ambient Temperature T – Ambient Temperature ( C) A Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 – ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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