PSMN016-100PS NXP Semiconductors, PSMN016-100PS Datasheet - Page 9

• Manufacturer Part Number: PSMN016-100PS
• Description: MOSFET,N CH,100V,96A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN016-100PS_1
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
80
60
40
20
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5.0
15
20 V
20
V
DS
= 50 V
5.2
30
40
45
80 V
Q
All information provided in this document is subject to legal disclaimers.
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5.5
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60
Rev. 01 — 1 March 2010
N-channel 100V 16 mΩ standard level MOSFET in TO220
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
−1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN016-100PS
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
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DS
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