PSMN016-100PS NXP Semiconductors, PSMN016-100PS Datasheet - Page 7

• Manufacturer Part Number: PSMN016-100PS
• Description: MOSFET,N CH,100V,96A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN016-100PS_1
Product data sheet
Fig 5.
Fig 7.
(pF)
(A)
4000
3000
2000
1000
I
C
D
60
45
30
15
0
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer Characteristic: drain current as a
Input and revers transfer capacitances as a
0
0
C
iss
3
2
T
j
= 175 °C
6
4
T
9
j
V
= 25 °C
All information provided in this document is subject to legal disclaimers.
GS
V
001aal315
001aal318
GS
(V)
C
rss
(V)
12
6
Rev. 01 — 1 March 2010
N-channel 100V 16 mΩ standard level MOSFET in TO220
Fig 6.
Fig 8.
R
(mΩ)
(S)
DSon
g
fs
80
60
40
20
30
25
20
15
10
0
5
drain current; typical values
of gate-source voltage; typical values
forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
15
5
PSMN016-100PS
30
10
45
15
© NXP B.V. 2010. All rights reserved.
V
I
001aal316
001aal319
GS
D
(A)
(V)
60
20
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