PSMN016-100PS NXP Semiconductors, PSMN016-100PS Datasheet - Page 6

• Manufacturer Part Number: PSMN016-100PS
• Description: MOSFET,N CH,100V,96A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
6. Characteristics
Table 6.
PSMN016-100PS_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
GS(pl)
SD
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
I
and
I
V
V
V
V
V
V
V
f = 1 MHz
I
I
and
I
I
and
V
V
see
V
R
I
I
V
D
D
D
D
D
D
D
D
D
S
S
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 30 A; V
= 30 A; V
= 30 A; V
= 15 A; V
= 10 A; dI
Figure 16
All information provided in this document is subject to legal disclaimers.
10
= 100 V; V
= 100 V; V
15
15
= 50 V; see
= 50 V; V
= 50 V; R
= 50 V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω; T
DS
DS
DS
GS
DS
S
DS
DS
DS
Rev. 01 — 1 March 2010
D
D
D
/dt = 100 A/µs; V
= 0 V; V
DS
GS
L
DS
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
= 15 A; T
= 0 V; T
GS
GS
= V
= V
= V
= 1.7 Ω; V
GS
GS
Figure 14
= 0 V; T
= 0 V; f = 1 MHz; T
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
N-channel 100V 16 mΩ standard level MOSFET in TO220
; T
; T
; T
GS
j
= 25 °C; see
j
GS
GS
j
j
j
j
j
GS
j
= 10 V; see
= 175 °C; see
= 25 °C; see
= -55 °C; see
= 100 °C; see
= 175 °C; see
= 25 °C; see
j
GS
= 25 °C
j
j
j
j
= 25 °C
and
= 10 V; see
= 10 V; see
= 125 °C
= 25 °C
= 10 V; see
= -55 °C
= 25 °C
= 10 V;
GS
15
= 0 V;
j
Figure 14
= 25 °C;
Figure 17
Figure 11
Figure 13
Figure 14
Figure 14
Figure 10
Figure 10
Figure 12
Figure 12
Figure 14
PSMN016-100PS
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.05
10
10
-
36.4
13
0.9
40
49
12
7.75
4.25
15
4.5
2404
189
113
17
18
0.8
54
126
23
36
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4
4.8
100
5
100
100
28.8
44.8
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
µA
nC
pF
ns
nC
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
V
pF
pF
ns
ns
ns
V
ns
6 of 15