SI4800BDY-T1-E3 Vishay, SI4800BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4800BDY-T1-E3
• Description: N CHANNEL MOSFET, 30V, 9A, SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4800BDY-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 18.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4800BDY-T1-E3TR

Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.0
0.4
0.2
50
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
- Temperature (°C)
25
T
J
= 150 °C
0.6
50
I
D
= 250 µA
75
0.8
0.01
100
0.1
100
10
T
1
J
0.1
= 25 °C
1.0
Safe Operating Area, Junction-to-Ambient
Limited
by R
* V
125
GS
DS(on)*
> minimum V
150
1.2
V
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
GS
at which R
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
150
120
90
60
30
0
10
0
is specified
-3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
DC
1 ms
10 ms
100 ms
1 s
10 s
2
100
V
10
GS
-2
- Gate-to-Source Voltage (V)
4
Time (s)
I
D
= 9 A
S-83039-Rev. H, 29-Dec-08
10
Document Number: 72124
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