SI4800 NXP Semiconductors, SI4800 Datasheet
SI4800
Available stocks
Related parts for SI4800
SI4800 Summary of contents
Page 1
... N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: Si4800 in SOT96-1 (SO8). 2. Features Low on-state resistance Fast switching TrenchMOS™ technology. 3. Applications convertors DC motor control ...
Page 2
... pulsed Figure 3 amb pulsed Figure 1 amb pulsed Figure 1 amb pulsed amb p Rev. 01 — 13 July 2001 Si4800 Typ Max Unit 2.5 W 150 C 15.5 18 Min Max Unit and ...
Page 3
... T amb ( C) ------------------ - I = der Fig 2. Normalized continuous drain current as a function of mounting base temperature. D. Rev. 01 — 13 July 2001 Si4800 03aa19 100 125 150 175 o T amb ( 100% 03af84 µ ...
Page 4
... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 08412 Product data N-channel enhancement mode field-effect transistor Conditions mounted on a printed circuit board; t minimum footprint; Figure Rev. 01 — 13 July 2001 Si4800 Value Unit 03af83 ...
Page 5
... Figure 2.3A Figure 2 /dt = 100 Rev. 01 — 13 July 2001 Si4800 Min Typ Max Unit 0 100 15.5 18 ...
Page 6
... 0 --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 13 July 2001 Si4800 03af87 V DS > DSon 150 ºC 25 º ( DSon 03ad57 ...
Page 7
... Fig 10. Sub-threshold drain current as a function of gate-source voltage iss C oss C rss (pF iss C oss C rss (V) Rev. 01 — 13 July 2001 Si4800 03aa36 min typ max 0.5 1 1 03af89 10 2 © Philips Electronics N.V. 2001. All rights reserved. ...
Page 8
... º 1 ( Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 13 July 2001 Si4800 03af90 (nC © Philips Electronics N.V. 2001. All rights reserved ...
Page 9
... 0.25 5.0 4.0 6.2 1.27 1.05 0.19 4.8 3.8 5.8 0.0100 0.20 0.16 0.244 0.050 0.041 0.0075 0.19 0.15 0.228 REFERENCES JEDEC EIAJ MS-012AA Rev. 01 — 13 July 2001 Si4800 SOT96 detail X ( 1.0 0.7 0.7 0.25 0.25 0.1 0.4 0.6 0.3 0.039 0.028 0.028 0.01 0.01 0.004 0.016 ...
Page 10
... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010713 - Product specification; initial version 9397 750 08412 Product data N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 Si4800 © Philips Electronics N.V. 2001. All rights reserved ...
Page 11
... Rev. 01 — 13 July 2001 Si4800 performance. Philips Semiconductors assumes © Philips Electronics N.V. 2001 All rights reserved. ...
Page 12
... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA72) Rev. 01 — 13 July 2001 Si4800 © Philips Electronics N.V. 2001. All rights reserved ...
Page 13
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 July 2001 Document order number: 9397 750 08412 N-channel enhancement mode field-effect transistor Si4800 ...