SI4800BDY-T1-E3 Vishay, SI4800BDY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4800BDY-T1-E3
• Description: N CHANNEL MOSFET, 30V, 9A, SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4800BDY-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 18.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4800BDY-T1-E3TR

Si4800BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
J
DSS
g
Q
R
t
t
t
SD
rr
fs
gs
gd
r
f
= 25 °C, unless otherwise noted
g
g
V
V
I
DS
D
DS
I
≅ 1 A, V
F
= 30 V, V
V
V
= 15 V, V
V
V
= 2.3 A, dI/dt = 100 A/µs
V
DS
I
DS
V
V
V
S
DD
DS
DS
GS
Test Conditions
DS
GS
= 2.3 A, V
= 0 V, V
= V
= 30 V, V
≥ 5 V, V
= 15 V, R
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 0 V, T
GS
= 5.0 V, I
D
GS
GS
= 250 µA
GS
D
D
L
D
= ± 20 V
= 10 V
= 15 Ω
= 9 A
= 9 A
= 7 A
= 0 V
= 0 V
J
g
= 55 °C
D
= 6 Ω
= 9 A
Min.
0.8
0.5
30
0.0155
0.023
Typ.
0.75
8.7
1.5
3.5
1.4
16
12
32
14
30
7
S-83039-Rev. H, 29-Dec-08
Document Number: 72124
0.0185
± 100
0.030
Max.
1.8
1.2
2.2
13
15
20
50
25
60
1
5
Unit
µA
nC
nA
ns
V
A
Ω
S
V
Ω