SI4800,518 NXP Semiconductors, SI4800,518 Datasheet

MOSFET N-CH 30V 9A SOT96-1

SI4800,518

Manufacturer Part Number
SI4800,518
Description
MOSFET N-CH 30V 9A SOT96-1
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.SI4800518.pdf (12 pages)

Specifications of SI4800,518

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18.5 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
11.8nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056750518
SI4800 /T3
SI4800 /T3
1. Product profile
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1 (SO-8), simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
M3D315
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
SI4800
N-channel TrenchMOS™ logic level FET
Rev. 02 — 17 February 2004
Low gate charge
Low on-state resistance
Portable appliances
Lithium-ion battery chargers
V
P
DS
tot
2.5 W
30 V
Simplified outline
SOT96-1 (SO8)
1
8
Top view
MBK187
5
4
Symbol
Surface mounted package
Fast switching.
Notebook computers
DC-to-DC converters.
I
R
D
DSon
9 A
18.5 m
MBB076
g
d
s
Product data

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SI4800,518 Summary of contents

Page 1

M3D315 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information Table 1: Pinning - SOT96-1 (SO-8), simplified outline and symbol Pin ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name SI4800 SO8 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot ---------------------- - P = 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of ambient temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) 5.1 Transient thermal impedance 0.5 Z th(j-amb) (K/W) 0.2 10 0.1 0.05 0. single pulse ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R drain-source on-state resistance DSon I ...

Page 6

Philips Semiconductors ( 0.2 0.4 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. ...

Page 7

Philips Semiconductors 2.5 V GS(th) (V) max 2 typ 1.5 1 min 0 250 Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors ( 150 0.2 0.4 0 and 150 Fig 12. Source (diode forward) current as a function ...

Page 9

Philips Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT ...

Page 10

Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 02 20040217 - Product data (9397 750 12899) Modifications: • • • • • • • • • 01 20010713 - Product data (9397 750 08412) 9397 ...

Page 11

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Product profi 1.1 Description . . . . . ...

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