SI4800BDY-T1-E3 Vishay, SI4800BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4800BDY-T1-E3
• Description: N CHANNEL MOSFET, 30V, 9A, SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4800BDY-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 18.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4800BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
V
GS
= 10 thru 5 V
0.040
0.032
0.024
0.016
0.008
0.000
40
35
30
25
20
15
10
6
5
4
3
2
1
0
5
0
0
0
0
On-Resistance vs. Drain Current
V
I
5
D
DS
2
= 9 A
1
V
DS
= 15 V
Q
Output Characteristics
V
g
- Drain-to-Source Voltage (V)
GS
10
- Total Gate Charge (nC)
I
D
= 4.5 V
Gate Charge
- Drain Current (A)
4
2
15
4 V
6
3
20
V
GS
3 V
= 10 V
8
4
25
30
10
5
1200
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
800
600
400
200
40
35
30
25
20
15
10
5
0
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
V
I
0.5
- 25
D
GS
= 9 A
C
rss
= 10 V
V
1.0
4
T
GS
Transfer Characteristics
0
V
J
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.5
- Drain-to-Source Voltage (V)
25
Capacitance
8
2.0
C
50
C
oss
Vishay Siliconix
iss
2.5
Si4800BDY
T
25 °C
12
C
75
= - 55 °C
3.0
100
www.vishay.com
3.5
16
125 °C
125
4.0
150
4.5
20
3