si4800-02 NXP Semiconductors, si4800-02 Datasheet
si4800-02
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si4800-02 Summary of contents
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... Quick reference data 2. Pinning information Table 1: Pinning - SOT96-1 (SO-8), simplified outline and symbol Pin Description 1,2,3 source (s) 4 gate (g) 5,6,7,8 drain (d) SI4800 N-channel TrenchMOS™ logic level FET Rev. 02 — 17 February 2004 Low gate charge Low on-state resistance Portable appliances Lithium-ion battery chargers 2.5 W tot Simplifi ...
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... Figure 2 and Figure Figure Figure Figure © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SI4800 Version SOT96-1 Max Unit 2.5 W 1.6 W +150 C +150 C 2 ...
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... DC 1 Rev. 02 — 17 February 2004 N-channel TrenchMOS™ logic level FET 0 50 100 150 T amb ( ------------------- = 100 03ap01 100 (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SI4800 03aa19 200 ...
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... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 12899 Product data Conditions mounted on a printed-circuit board; minimum footprint Rev. 02 — 17 February 2004 SI4800 N-channel TrenchMOS™ logic level FET Min Typ Max Unit - - 10 s; Figure 4 p 03af83 t p ...
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... Figure 1 Figure /dt = 100 Rev. 02 — 17 February 2004 SI4800 Min Typ Max 0 100 8 - 15 ...
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... C and 150 DSon function of gate-source voltage; typical values 1.5 1 0 120 R DSon a = ---------------------------- - R DSon 25 C factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SI4800 003aaa326 (V) 03aa27 180 ...
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... Rev. 02 — 17 February 2004 N-channel TrenchMOS™ logic level FET min typ max ( gate-source voltage. 003aaa328 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SI4800 03aa36 ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 17 February 2004 SI4800 N-channel TrenchMOS™ logic level FET 003aaa625 (nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.244 0.039 0.028 0.041 0.01 0.01 0.228 0.016 0.024 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SI4800 SOT96 ( 0.7 0 0.028 0.004 0.012 ISSUE DATE 99-12-27 03-02- ...
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... N-channel TrenchMOS™ logic level FET clarification of thermal resistance table. value improved. DSon , Q and Q values improved. g(tot and t conditions and typical values modified. r d(off 11, 12 and 13 modified. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SI4800 ...
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... Rev. 02 — 17 February 2004 Rev. 02 — 17 February 2004 SI4800 SI4800 N-channel TrenchMOS™ logic level FET N-channel TrenchMOS™ logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 February 2004 Document order number: 9397 750 12899 SI4800 N-channel TrenchMOS™ logic level FET ...