BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 9

• Manufacturer Part Number: BLS6G2731-120
• Description: LDMOS,RF,120W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 33A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Fig 12. Package outline SOT502B
BLS6G2731-120_6G2731S-120_1
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
BLS6G2731-120; BLS6G2731S-120
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
Rev. 01 — 14 November 2008
REFERENCES
E 1
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
LDMOS S-band radar power transistor
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
E
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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