BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet

LDMOS,RF,120W,2700M-3100MHZ,32V

BLS6G2731-120

Manufacturer Part Number
BLS6G2731-120
Description
LDMOS,RF,120W,2700M-3100MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G2731-120112.pdf (12 pages)

Specifications of BLS6G2731-120

Drain Source Voltage Vds
60V
Continuous Drain Current Id
33A
Operating Frequency Range
1.2GHz To 1.4GHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
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1. Product profile
CAUTION
1.1 General description
1.2 Features
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1.
Typical RF performance at T
production test circuit.
I
I
I
I
I
I
I
I
I
I
Mode of operation
pulsed RF
BLS6G2731-120;
BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01 — 14 November 2008
Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an I
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.1 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Output power = 120 W
Power gain = 13.5 dB
Efficiency = 48 %
Typical performance
Dq
of 100 mA, a t
case
f
(GHz)
2.7 to 3.1
= 25 C; t
p
of 100 s with of 10 %:
V
(V)
32
DS
p
= 100 s; = 10 %; I
P
(W)
120
L
G
(dB)
13.5
Dq
p
= 100 mA; in a class-AB
(%)
48
D
Product data sheet
t
(ns)
20
r
t
(ns)
6
f

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BLS6G2731-120 Summary of contents

Page 1

... BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... NXP Semiconductors 1.3 Applications I S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range 2. Pinning information Table 2. Pin BLS6G2731-120 (SOT502A BLS6G2731S-120 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLS6G2731-120 BLS6G2731S-120 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 3

... L(1dB droop(pulse BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Thermal characteristics Parameter transient thermal impedance from junction to mounting base Characteristics drain-source breakdown voltage V gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance V Application information = 100 s ...

Page 4

... Table 8. f GHz 2.7 2.8 2.9 3.0 3.1 Fig 1. 7.1 Ruggedness in class-AB operation The BLS6G2731-120 and BLS6G2731S-120 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Typical impedance Z S 3.4 j7 ...

Page 5

... 100 mA ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 4. Drain efficiency as a function of load power; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 001aaj091 G (dB) 120 160 P ( 300 ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 3. Power gain as a function of load power; typical ...

Page 6

... G p (dB 2.65 2.75 2.85 2. 120 Fig 8. Power gain and drain efficiency as function of frequency; typical values BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 001aaj095 300 ( 2.7 GHz ( 2.9 GHz ( 3.1 GHz Fig 7. Load power as a function of input power; 001aaj097 (%) (dB 3.05 3.15 f (GHz) = 100 mA ...

Page 7

... C7, C8 multilayer ceramic chip capacitor 100 pF C12 electrolytic capacitor C13 multilayer ceramic chip capacitor SMD resistor BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 C7 C6 Value Rev. 01 — 14 November 2008 LDMOS S-band radar power transistor C13 C8 C9 C11 ...

Page 8

... UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 11. Package outline SOT502A BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 12. Package outline SOT502B BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 10

... LDMOST RF S-band VSWR 11. Revision history Table 11. Revision history Document ID BLS6G2731-120_6G2731S-120_1 BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status 20081114 Product data sheet Rev. 01 — ...

Page 11

... For more information, please visit: For sales office addresses, please send an email to: BLS6G2731-120_6G2731S-120_1 Product data sheet BLS6G2731-120; BLS6G2731S-120 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com LDMOS S-band radar power transistor All rights reserved. Date of release: 14 November 2008 Document identifier: BLS6G2731-120_6G2731S-120_1 ...

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