BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 12

• Manufacturer Part Number: BLS6G2731-120
• Description: LDMOS,RF,120W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 33A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ruggedness in class-AB operation. . . . . . . . . . 4
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLS6G2731-120; BLS6G2731S-120
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
LDMOS S-band radar power transistor
Document identifier: BLS6G2731-120_6G2731S-120_1
Date of release: 14 November 2008
All rights reserved.