BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 5
![LDMOS,RF,120W,2700M-3100MHZ,32V](/photos/41/53/415337/sot502a_3d_sml.gif)
BLS6G2731-120
Manufacturer Part Number
BLS6G2731-120
Description
LDMOS,RF,120W,2700M-3100MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G2731-120112.pdf
(12 pages)
Specifications of BLS6G2731-120
Drain Source Voltage Vds
60V
Continuous Drain Current Id
33A
Operating Frequency Range
1.2GHz To 1.4GHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
5 000
Company:
Part Number:
BLS6G2731-120,112
Manufacturer:
ZCOMM
Quantity:
1 400
NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
Fig 2. Power gain as a function of load power; typical
Fig 4. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
15
13
11
60
40
20
9
7
0
values
typical values
0
0
V
V
DS
DS
= 32 V; I
= 32 V; I
7.2 Graphs
40
40
Dq
Dq
= 100 mA; t
= 100 mA; t
(1)
(3)
(2)
80
80
(1)
(2)
(3)
p
p
= 300 s; = 10 %.
= 300 s; = 10 %.
120
120
BLS6G2731-120; BLS6G2731S-120
P
P
001aaj091
001aaj093
L
L
(W)
(W)
Rev. 01 — 14 November 2008
160
160
Fig 3. Power gain as a function of load power; typical
Fig 5. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
15
13
11
60
40
20
9
7
0
values
typical values
0
V
0
V
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-band radar power transistor
40
40
Dq
Dq
= 100 mA; t
= 100 mA; t
(1)
(3)
(2)
80
80
p
p
= 100 s;
= 100 s;
(1)
(2)
(3)
120
120
© NXP B.V. 2008. All rights reserved.
P
P
001aaj092
001aaj094
L
L
(W)
(W)
= 20 %.
= 20 %.
160
160
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