BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 2
![LDMOS,RF,120W,2700M-3100MHZ,32V](/photos/41/53/415337/sot502a_3d_sml.gif)
BLS6G2731-120
Manufacturer Part Number
BLS6G2731-120
Description
LDMOS,RF,120W,2700M-3100MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet
1.BLS6G2731-120112.pdf
(12 pages)
Specifications of BLS6G2731-120
Drain Source Voltage Vds
60V
Continuous Drain Current Id
33A
Operating Frequency Range
1.2GHz To 1.4GHz
Rf Transistor Case
SOT-502A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLS6G2731-120
Manufacturer:
NXP
Quantity:
5 000
Company:
Part Number:
BLS6G2731-120,112
Manufacturer:
ZCOMM
Quantity:
1 400
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLS6G2731-120_6G2731S-120_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLS6G2731-120 (SOT502A)
1
2
3
BLS6G2731S-120 (SOT502B)
1
2
3
Type number
BLS6G2731-120
BLS6G2731S-120 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
BLS6G2731-120; BLS6G2731S-120
Package
Name
-
Rev. 01 — 14 November 2008
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
[1]
[1]
LDMOS S-band radar power transistor
Simplified outline
1
2
1
2
3
Min
-
-
-
3
0.5
65
Graphic symbol
© NXP B.V. 2008. All rights reserved.
Max
60
+13
33
+150
225
2
2
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
Unit
V
V
A
C
C
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