MMBZ10VAL NXP Semiconductors, MMBZ10VAL Datasheet - Page 6
MMBZ10VAL
Manufacturer Part Number
MMBZ10VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,6.5V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ10VAL
Reverse Stand-off Voltage Vrwm
6.5V
Breakdown Voltage Range
9.5V To 10.5V
Clamping Voltage Vc Max
14.2V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
1.7A
Diode Case
RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBZ10VAL
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
MMBZ10VALT1
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBZ10VALT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Fig 1.
(%)
I
PP
150
100
50
0
0
IEC 61643-321
10/1000 μs pulse waveform according to
100 % I
1.0
PP
; 10 μs
50 % I
2.0
PP
; 1000 μs
3.0
t
006aab319
p
(ms)
Rev. 02 — 10 December 2009
4.0
Low capacitance unidirectional double ESD protection diodes
Fig 2.
100 %
90 %
10 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
t
r
30 ns
MMBZxAL series
= 0.7 ns to 1 ns
60 ns
© NXP B.V. 2009. All rights reserved.
001aaa631
t
6 of 17
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